Philippe Boucaud
(1) Ludwig-Maximilians-Universität München (2) Centre de Nanoscience et de Nanotechnologie, (3) Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, (4) CEA-IRIG - philippe.boucaud@crhea.cnrs.frFarsane Tabataba-Vakili (1), Maksym Gromovyi(2), Nagesh Bhat(3), Sébastien Chenot(3), Moustafa El Kurdi(2), X. Checoury(2),B. Gayral(4), Eric Frayssinet(3), Blandine Alloing(3), Benjamin Damilano(3), Fabrice Semond(3)
The III-nitride semiconductors have boosted the development of LEDs and lasers in the blue and visible spectral range. More recently, microlasers have been demonstrated. Beyond the stand-alone device, the current trend is now to integrate these lasers or microlasers in photonic circuits. In the latter case, the type of substrate is of critical importance as the III-nitride semiconductors can be grown on different types of substrates, including GaN/AlN substrates, sapphire or silicon. In this presentation we will review the different challenges for microlaser integration in photonic circuits and how we can extend the spectral range covered by the III-nitrides.
Philippe Boucaud is a senior research associate at CNRS. His research topic has focused on the development of new laser sources, either with Group-IV semiconductors or III-nitride semiconductors. He his currently director of CRHEA, Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications (http://www.crhea.cnrs.fr)